optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a 03/09 page 1 of 3 high reliability hermetic in frared emitting diode op235, op236 (tx, txv) description: each device in this series is a gallium aluminum arseni de (gaaias) infrared emitting diode, mounted in a hermetic metal to-46 housing with 0.50? (12.70 mm) leads. the gallium aluminum ar senide feature provides a higher radiated output than gallium arsenide at the same forwar d current, while the 890 nm wavelength closely matches the spectral response of silicon phototransistors. devices have lens cans that provide an 18 beam angle between half power points, which facilit ates the easy design of beam interru pt applications with the op804 and op805 series of high reliability phototransistors. tx and txv devices are processed to optek?s military sc reening program patterned after mil-prf-19500. after 100% screening, group a and b are performed on every lot and a group c test is performed every six months. please refer to application bulletins 208 and 210 for additi onal design information and re liability (degradation) data. contact your local representative or optek for more information. features: ? to-46 hermetically sealed package with lens ? twice the power output of ga as at same drive current ? characterized to define infrared energy along mechanical axis of device ? narrow beam angle ? processed to mil-prf-19500. applications: ? non-contact reflecti ve object sensor ? assembly line automation ? machine automation ? machine safety ? end of travel sensor ? door sensor ? military and harsh environments part number led peak wavelength output power (mw/cm 2 ) min / max i f (ma) typ / max total beam angle lead length op235tx 890 nm 1.5 / na 50 / 100 18 0.50" OP235TXV op236tx 3.5 / na op236txv 2 1 pin # led sensor 1 anode collector / cathode 2 cathode emitter / anode dimensions are in: inches [ millimeters]
optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a 03/09 page 2 of 3 high reliability hermetic in frared emitting diode op235, op236 (tx, txv) absolute maximum ratings (t a = 25 c unless otherwise noted) storage temperature range -65 o c to +150 o c operating temperature range -55 o c to +125 o c reverse voltage 2.0 v forward dc current 100 ma lead soldering temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260 c (1) power dissipation 200 mw (2) notes: 1. rma flux is recommended. duration can be exten ded to 10 seconds maximum when flow soldering. 2. derate linearly 2.00 mw/ c above 25 c. 3. e e(apt) is a measurement of the average radiant intensity within the cone formed by the measurement surface, a radius of 1.429? (36.30 mm) measured from the lens side of the tab to t he sensing surface and a sensing su rface of 0.250? (6.35 mm) in diameter forming a 10 cone. e e(apt) is not necessarily uniform within the measured area. electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter min typ max units test conditions e e(apt) apertured radiant incidence op235 (tx, txv) op236 (tx, txv) 1.5 3.5 - - - - mw/cm 2 i f = 100 ma v f forward voltage 1.1 1.3 0.9 - - - 2.0 2.2 1.8 v i f = 100 ma i f = 100 ma, t a = -55 c i f = 100 ma, t a = 100 c i r reverse current - - 100 a v r = 2.0 v p wavelength at peak emission - 890 - nm i f = 100 ma spectral bandwidth between half power points - 50 - nm i f = 100 ma hp emission angle at half power points - 18 - degree i f = 100 ma
optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a 03/09 page 3 of 3 high reliability hermetic in frared emitting diode op235, op236 (tx, txv) op235, op236 (tx, txv) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 5 10 15 20 25 30 35 40 45 50 forward current (ma) typical forward voltage (v) -60c -40c -20c 0c 20c 40c 60c 80c 100c 120c forward voltage vs forward current vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 0 102030405060708090100 forward current i f (ma) relative output power -60c -40c -20c 0c 20c 40c 60c 80c 100c 120c normalized at 50 ma and 20 c optical power vs forward current vs temperature 0 2 4 6 8 10 12 14 16 18 20 0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 '' distance (inches) normalized output power 10 ma 20 ma 30 ma 40 ma 50 ma 60 ma 80 ma 100 ma 120 ma normalized at 1.0" and 50 ma forward current distance vs output power vs forward current
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